1/7 preliminary data march 2002 this is preliminary information on a new product now in development or undergoing evaluation. details are subject to change wit hout notice. STB70NF02L n-channel 20v - 0.006 w - 70a d 2 pak low gate charge stripfet?ii power mosfet n typical r ds (on) = 0.016 w n typical q g = 36 nc @ 10 v n optimal r ds(on) x qg trade-off n conduction losses reduced n switching losses reduced description this application specific power mosfet is the third genaration of stmicroelectronis unique "single feature size?" strip-based process. the resulting transistor shows the best trade-off between on-resistance and gate charge. when used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. this is extremely important for motherboards where fast switching and high efficiency are of paramount importance. applications n specifically designed and optimised for high efficiency cpu core dc/dc converters type v dss r ds(on) i d STB70NF02L 20 v <0.009 w 70 a add suffix t4 for ordering in tape & reel 1 3 d 2 pak to-263 (suffix t4) absolute maximum ratings ( ) pulse width limited by safe operating area symbol parameter value unit v ds drain-source voltage (v gs = 0) 20 v v dgr drain-gate voltage (r gs = 20 k w ) 20 v v gs gate- source voltage 18 v i d drain current (continuous) at t c = 25c 70 a i d drain current (continuous) at t c = 100c 50 a i dm ( ) drain current (pulsed) 280 a p tot total dissipation at t c = 25c 100 w derating factor 0.67 w/c t stg storage temperature -65 to 175 c t j max. operating junction temperature 175 c internal schematic diagram
STB70NF02L 2/7 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (* ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max typ 1.5 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a v gs = 0 20 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 18v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 1v r ds(on) static drain-source on resistance v gs = 10 v i d = 35 a v gs = 5 v i d = 18 a 0.006 0.011 0.009 0.015 w w symbol parameter test conditions min. typ. max. unit g fs (*) forward transconductance v ds >i d(on) xr ds(on)max i d =35 a 40 s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v, f = 1 mhz, v gs = 0 1500 900 200 pf pf pf
3/7 STB70NF02L switching on switching off source drain diode (*) pulsed: pulse duration = 300 s, duty cycle 1.5 %. ( ) pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 10 v i d = 35 a r g = 4.7 w v gs = 4.5 v (resistive load, figure 3) 480 ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd =16 v i d =46 a v gs =10v 36 5 10 45 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 10 v i d = 35 a r g = 4.7 w, v gs = 4.5 v (resistive load, figure 3) 30 110 ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm ( ) source-drain current source-drain current (pulsed) 70 280 a a v sd (*) forward on voltage i sd = 70 a v gs = 0 1.2 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 70 a di/dt = 100a/s v dd = 15 v t j = 150c (see test circuit, figure 5) 60 100 2 ns nc a electrical characteristics (continued)
STB70NF02L 4/7 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/7 STB70NF02L dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.016 v2 0 4 0 4 d 2 pak mechanical data
STB70NF02L 6/7 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
7/7 STB70NF02L information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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